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机译:脉冲沉积激光控制室温沉积硫化镉薄膜的缺陷
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA;
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA,Centro de Investigacion en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, Mexico;
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA;
Centro de Investigacion en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, Mexico;
Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900, Brazil;
Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900, Brazil;
Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900, Brazil;
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA;
Pulsed laser deposition; Cadmium sulfide; Sulfur vacancies; Carrier concentration;
机译:室温下通过脉冲激光沉积法沉积的铜基硫族化物薄膜的电学和光学特性:面向可在室温下制备的p沟道薄膜晶体管
机译:在脉冲激光沉积过程中控制硫化镉薄膜的相组成
机译:溅射和脉冲激光沉积单一季铵靶Cu_2ZnSnS_4薄膜的比较研究。
机译:通过脉冲激光沉积在Si和InP衬底上沉积的硫化镧薄膜的场发射特性
机译:脉冲激光沉积形成的硫化镉/塑料,硫化镉/玻璃和碲化锌/砷化镓杂对的光电流光谱
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:通过脉冲激光沉积在Srruo3 / Srtio3substrate上的各种温度下沉积Pb(Zr0.2Ti0.8)O3膜的表征