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机译:使用脉冲直流电沉积低温溅射In_2O_3薄膜。粉末靶的磁控溅射
Materials & Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT, UK ,Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55414, USA;
Materials & Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT, UK;
Materials & Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT, UK;
Indium oxide thin films; Pulsed d.c. magnetron sputtering; Low temperature sputtering; Powder target sputtering;
机译:靶成分和沉积温度对脉冲直流磁控溅射中ZnO:Ga透明导电氧化物膜性能的综合影响
机译:高功率脉冲磁控溅射和脉冲磁控溅射沉积氧化钇稳定的氧化锆薄膜
机译:高功率脉冲磁控溅射铝氮化铝薄膜沉积的最佳目标溅射模式
机译:陶瓷和金属旋转靶材通过脉冲直流磁控溅射在低温下沉积的高导电性和透明ITO膜
机译:用于微辐射热计应用的脉冲直流磁控溅射氧化钒薄膜的制备,表征和沉积后修饰
机译:低温下大功率脉冲磁控溅射在铀上沉积的TiN膜
机译:磁控溅射从复合靶材上沉积的低氧化学计量外延ZrB2薄膜:沉积温度和溅射功率的影响