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首页> 外文期刊>Thin Solid Films >The deposition of low temperature sputtered In_2O_3 films using pulsed d.c. magnetron sputtering from a powder target
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The deposition of low temperature sputtered In_2O_3 films using pulsed d.c. magnetron sputtering from a powder target

机译:使用脉冲直流电沉积低温溅射In_2O_3薄膜。粉末靶的磁控溅射

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摘要

Transparent conductive oxide layers are widely used in various applications such as solar cells, touch screen displays, heatable glasses, etc. This present work describes the deposition of transparent and conducting In_2O_3 films from In_2O_3 powdered targets using a pulsed D.C. magnetron sputtering technique without additional substrate heating or substrate biasing. The films deposited at various oxygen concentrations were approximately 500 nm thick, were pin-hole free and well adhered to the glass substrates. The material characteristics of the films were analysed using X-ray diffraction, four point probe, hot probe, UV-vis spectroscopy, atomic force microscopy and profilometry. Structural and electrical analyses revealed that the films were crystalline and highly conductive when sputtered in the absence of oxygen but a dramatic change in resistivity was observed when oxygen was introduced during the deposition. Resistivity increased from 0.004 Ω cm (no oxygen) to 5 Ω cm with 10% oxygen.
机译:透明导电氧化物层广泛用于各种应用中,例如太阳能电池,触摸屏显示器,可加热玻璃等。这项工作描述了使用脉冲DC磁控溅射技术从In_2O_3粉末状靶材上沉积透明且导电的In_2O_3膜的方法,而无需使用其他基板加热或基材偏置。在各种氧气浓度下沉积的薄膜约为500 nm厚,无针孔并很好地粘附在玻璃基板上。使用X射线衍射,四点探针,热探针,UV-可见光谱,原子力显微镜和轮廓测定法分析膜的材料特性。结构和电学分析表明,在没有氧气的情况下进行溅射时,这些薄膜具有结晶性和高导电性,但是在沉积过程中引入氧气时,电阻率发生了显着变化。含10%氧气的电阻率从0.004Ωcm(无氧)增加到5Ωcm。

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