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机译:利用非晶硅晶种通过快速熔化生长在绝缘衬底上横向生长单晶锗
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;
Germanium; Germanium on insulator; Amorphous silicon; Rapid melting growth; Rapid thermal annealing;
机译:固液共存区域中自组织播种和快速熔炼生长SiGe条纹在绝缘基板上的横向生长
机译:(100)结合Si微晶技术的快速熔体生长在绝缘基板上的取向控制Ge大条纹
机译:非晶锗在绝缘衬底上单晶生长的无自成核和尺寸依赖性的金属诱导的非晶态锗横向结晶
机译:通过在绝缘基板上快速熔化生长的高迁移率无缺陷ge单晶
机译:在非晶衬底和用于3D集成电路的高性能亚100 nm薄膜晶体管上的纳米图形引导的单晶硅生长。
机译:在非晶绝缘衬底上生长单晶金属
机译:利用非晶硅晶种通过快速熔化生长在绝缘衬底上横向生长单晶锗
机译:作者:张莹莹,张莹,王莹,李楠,材料导报maTERIaLs