Influence of deposition rate on interface width of Mo/Si multilayers

摘要

The application of high-reflectance Mo/Si multilayers in extreme ultraviolet (EUV) lithography does not only require high normal-incidence reflectivity but also long lifetime. In this paper, the microstructure of multilayers has been studied by means of X-ray reflectivity, X-ray diffraction, atomic force microscopy, and transmission electron microscopy. The interface width of Mo/Si multilayers is strongly influenced by the deposition rate. The interface width increases with the deposition rate.