...
首页> 外文期刊>Thin Solid Films >Mechanical characterization of a-C:H:SiOx coatings synthesized using radio-frequency plasma-assisted chemical vapor deposition method
【24h】

Mechanical characterization of a-C:H:SiOx coatings synthesized using radio-frequency plasma-assisted chemical vapor deposition method

机译:射频等离子体辅助化学气相沉积法合成的a-C:H:SiOx涂层的机械特性

获取原文
获取原文并翻译 | 示例

摘要

A series of SiOx containing a-C:H films was deposited on polished silicon substrates by RF PACVD (Radio Frequency Plasma Assisted Chemical Vapour Deposition) method using methane and hexamethyldisiloxane (HMDSO). Three CH4/HMDSO flow ratios and four self-bias voltages were applied for the synthesis of 12 different a-C:H:SiOx coatings having different properties and silicon/oxygen concentrations. The chemical structure of the deposited films was determined by Fourier transform infrared spectroscopy. Detailed characterization of the mechanical properties of SiOx incorporated carbon coatings was made using the nanoindentation (hardness and modulus) and profilometry (residual stress) methods. Hardness and elastic modulus were used for the evaluation of the endurance capability (H/E) and resistance to plastic deformation (H-3/E-2). The elastic recovery was calculated based on loading and unloading curves. The residual stress of diamond-like carbon coatings can be effectively reduced by the incorporation of SiOx. The mechanism of reducing the residual stress depending on the applied self-bias voltage is proposed. In the case of all of the examined coatings the addition of SiOx reduces the hardness, while for high self-bias voltages an increase of endurance capability and resistance to plastic deformation is observed. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过使用甲烷和六甲基二硅氧烷(HMDSO)的RF PACVD(射频等离子体辅助化学气相沉积)方法,在抛光的硅基板上沉积一系列含SiOx的a-C:H膜。施加三种CH4 / HMDSO流量比和四种自偏压,以合成12种具有不同性能和硅/氧浓度的a-C:H:SiOx涂层。通过傅立叶变换红外光谱法确定沉积膜的化学结构。使用纳米压痕(硬度和模量)和轮廓分析(残余应力)方法对掺入SiOx的碳涂层的机械性能进行了详细的表征。硬度和弹性模量用于评估耐力(H / E)和抗塑性变形(H-3 / E-2)。基于加载和卸载曲线计算弹性回复率。通过掺入SiOx可以有效地降低类金刚石碳涂层的残余应力。提出了根据施加的自偏压降低残余应力的机理。在所有检查过的涂层中,添加SiOx会降低硬度,而对于高自偏压,则可以提高耐力和抗塑性变形能力。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Thin Solid Films》 |2015年第1期|299-305|共7页
  • 作者单位

    Jan Kochanowski Univ Humanities & Sci, Inst Physiotherapy, PL-25317 Kielce, Poland.;

    Tech Univ Liberec, Inst Nanomat Adv Technol & Innovat, Liberec 46117, Czech Republic.;

    Lodz Univ Technol, Inst Mat Sci & Engn, PL-90924 Lodz, Poland.;

    Lodz Univ Technol, Inst Mat Sci & Engn, PL-90924 Lodz, Poland.;

    Lodz Univ Technol, Inst Mat Sci & Engn, PL-90924 Lodz, Poland.;

    Tech Univ Liberec, Inst Nanomat Adv Technol & Innovat, Liberec 46117, Czech Republic.;

    Tech Univ Liberec, Inst Nanomat Adv Technol & Innovat, Liberec 46117, Czech Republic.;

    Univ W Bohemia, Fac Sci Appl, Dept Phys, CZ-30614 Plzen, Czech Republic.;

    Univ W Bohemia, Fac Sci Appl, Dept Phys, CZ-30614 Plzen, Czech Republic.;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Diamond-like carbon; Silicon; Radio-Frequency Plasma-Assisted Chemical; Vapour Deposition; Stress;

    机译:类金刚石碳;硅;射频等离子体辅助化学;蒸气沉积;应力;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号