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Nanocrystalline TiO2 thin film prepared by low-temperature plasma-enhanced chemical vapor deposition for photocatalytic applications

机译:通过低温等离子体增强化学气相沉积制备的光催化应用纳米TiO2薄膜

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A PECVD (Plasma-enhanced Chemical Vapor Deposition) process operating at 150 degrees C has been implemented to prepare micro-columnar porous TiO2 anatase thin films, performing post-annealing at 300 degrees C for 5 h. Optimized PECVD conditions have enabled us to obtain homogeneous films with thickness equal to 1-2 mu m +/- 0.2 mu m. An anatase seeding interface deposited prior to the PECVD process has enabled us to reduce crystallization time down to 1.5 h. The size of nano-crystals in prepared anatase thin films has been estimated to be 20 nm by applying the Scherrer equation. Besides, the band-gap energy (E-g) of synthesized anatase thin films on quartz was found to be 3.30 eV. (C) 2015 Elsevier B.V. All rights reserved.
机译:已实施在150摄氏度下运行的PECVD(等离子体增强化学气相沉积)工艺来制备微柱状多孔TiO2锐钛矿薄膜,并在300摄氏度下进行5小时后退火。优化的PECVD条件使我们能够获得厚度等于1-2μm+/- 0.2μm的均匀膜。在PECVD工艺之前沉积的锐钛矿晶种界面使我们能够将结晶时间降低至1.5 h。通过应用Scherrer方程,已制备的锐钛矿型薄膜中纳米晶体的尺寸估计为20 nm。此外,发现在石英上合成的锐钛矿薄膜的带隙能(E-g)为3.30 eV。 (C)2015 Elsevier B.V.保留所有权利。

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