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Composition-dependent nanostructure of Cu(In,Ga)Se-2 powders and thin films

机译:Cu(In,Ga)Se-2粉末和薄膜的成分依赖性纳米结构

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摘要

Atomic-scale structural parameters of Cu(In, Ga)Se-2 powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. (C) 2014 Elsevier B.V. All rights reserved.
机译:使用X射线吸收光谱法确定了Cu(In,Ga)Se-2粉末和多晶薄膜的原子尺度结构参数是In和Cu含量的函数。对于平均键长,在两种样品类型中均未观察到差异,这表明四面体配位半导体具有典型的保持键长的强烈趋势。相反,薄膜中的键长变化明显小于粉末中的键长变化,特别是对于贫铜材料而言。纳米结构的这种差异被认为是由于制备条件的不同而引起的,其中最显着的原因是铜组成的不同历史。 (C)2014 Elsevier B.V.保留所有权利。

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