Low temperature formation of CuIn1-xGaxSe2 solar cell absorbers by all printed multiple species nanoparticulate Se plus Cu-In plus Cu-Ga precursors

摘要

In this work an all nanoparticulate precursor for application in Cu(In1-xGax)Se-2 solar cell absorbers is presented. Binary Cu-In nanoparticles, Cu-Ga powder and elemental Se nanoparticles were mixed in dispersion and deposited on Mo-coated substrates. Research was focused on Cu(In1-xGax)Se-2 layer formation kinetics, phase composition characterised by differential scanning calorimetry and in-situ X-ray diffraction (XRD). Furthermore phase composition and morphology were studied by ex-situ XRD, Raman spectroscopy and scanning electron microscopy. The results revealed a fast consumption of the precursor and the formation of CuInSe2 below 340 degrees C. Binary secondary phases were not observed at any temperature. (C) 2014 Elsevier B.V. All rights reserved.