Toward the understanding of annealing effects on (GaIn)(2)O-3 films

摘要

(GaIn)(2)O-3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N-2, vacuum, Ar, O-2) and temperatures (700-1000 degrees C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 degrees C under O-2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)(2)O-3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 degrees C under O-2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. (C) 2015 Elsevier B.V. All rights reserved.