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首页> 外文期刊>Thin Solid Films >Effects of adding hydrocarbon gas to a high-power impulse magnetron sputtering system on the properties of diamond-like carbon films
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Effects of adding hydrocarbon gas to a high-power impulse magnetron sputtering system on the properties of diamond-like carbon films

机译:在大功率脉冲磁控溅射系统中添加烃类气体对类金刚石碳膜性能的影响

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Diamond-like carbon (DLC) films were prepared via reactive high-power impulse magnetron sputtering (HiPIMS) using a mixture of argon and a small amount of C2H4 or CH4 gas. Synthesis of the DLC films was based on both plasma-enhanced chemical vapor deposition and physical vapor deposition. At a peak target current of 30 A corresponding to 1.1 A/cm(2), the hardness of films prepared with hydrocarbon gas fractions of less than 5% was somewhat higher than the hardness of films prepared via nonreactive Ar HiPIMS. The absence of background due to photoluminescence in the Raman spectra indicated that the hydrogen contents in the films were less than 20%. X-ray photoelectron spectroscopy (XPS) was performed, and the peaks related to the sp(3)C in the C is core level spectra were investigated. The sp(3)C peaks in the C is spectra of the films prepared at hydrocarbon gas fractions below 5% were more intense than sp(3)C related peaks in the spectra of the films prepared via nonreactive HiPIMS. The sp(3)C related peaks accounted for more than 30% of the total at a peak target current of 30 A. The influence of the target current on film properties was also investigated. At peak values of target current exceeding 40 A, the hardness of the films prepared via the nonreactive HiPIMS was somewhat higher than that of the films prepared via reactive HiPIMS. This was predicted from the relationship between the target current and the sp(3)C content estimated from the XPS spectra.
机译:通过使用氩气和少量C2H4或CH4气体的混合物,通过反应性高功率脉冲磁控溅射(HiPIMS)制备类金刚石碳(DLC)膜。 DLC膜的合成是基于等离子体增强的化学气相沉积和物理气相沉积两者。在30 A的峰值目标电流(对应于1.1 A / cm(2))下,碳氢化合物气体含量小于5%的薄膜的硬度略高于通过非反应性Ar HiPIMS制备的薄膜的硬度。由于在拉曼光谱中由于光致发光而没有背景,表明膜中的氢含量小于20%。进行了X射线光电子能谱(XPS),研究了C中与sp(3)C相关的峰为核能级谱。 C中的sp(3)C峰是在低于5%的烃气馏分下制备的膜的光谱比通过非反应性HiPIMS制备的膜的光谱中的sp(3)C相关的峰更强。在30 A的峰值目标电流下,sp(3)C相关峰占总数的30%以上。还研究了目标电流对薄膜性能的影响。在目标电流的峰值超过40 A时,通过非反应性HiPIMS制备的薄膜的硬度略高于通过反应性HiPIMS制备的薄膜的硬度。这是根据目标电流与XPS光谱估计的sp(3)C含量之间的关系预测的。

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