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Effect of the oxidation of aluminum bottom electrode in a functionalized-carbon nanotube based organic rewritable memory device

机译:功能化碳纳米管基有机可改写存储器件中铝底电极氧化的影响

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摘要

In this work, a bistable switching between ON and OFF states in current-voltage (I-V) measurements in the Al/AlOx/functionalized-multiwalled carbon nanotubes (f-MWCNTs) embedded in a PEDOT:PSS layer/Al devices is shown. It is found that oxidizing the surface aluminum bottom electrode using UV ozone treatment enhances the performance and stability in room conditions of these memory devices. A well-defined threshold voltage is obtained, which allows the implementation of many write-read-erase-read cycles after the UV ozone treatment for 1 min. The improvement of the rewritable memory characteristics due to the UV ozone treatment is related with the increase of the thickness (and stabilization) of an aluminum oxide (AlOx) layer, with the change in the hydrophilicity of the aluminum oxide surface as well as the creation of traps in the aluminum oxide layer. (C) 2016 Elsevier B.V. All rights reserved.
机译:在这项工作中,显示了嵌入在PEDOT:PSS层/ Al器件中的Al / AlOx /功能化多壁碳纳米管(f-MWCNT)中的电流-电压(I-V)测量中的ON和OFF状态之间的双稳态切换。发现使用UV臭氧处理氧化表面铝底部电极增强了这些存储器件在室内条件下的性能和稳定性。获得了明确定义的阈值电压,该阈值电压允许在UV臭氧处理1分钟后执行许多写入-读取-擦除-读取循环。由于紫外线臭氧处理而导致的可重写存储特性的改善与氧化铝(AlOx)层厚度(和稳定性)的增加,氧化铝表面亲水性的变化以及生成有关。在氧化铝层中的陷阱。 (C)2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Thin Solid Films》 |2016年第30期|10-16|共7页
  • 作者单位

    Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, Alvaro Obregon 64, San Luis Potosi 78000, Mexico;

    Inst Tecnol San Luis Potosi, Av Tecnol,S-N Col UPA, Soledad Graciano Sanchez 78437, Mexico|IPICYT, Adv Mat Dept, Camino Presa San Jose 2055,Col Lomas 4A Secc, San Luis Potosi 78216, Mexico;

    Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, Alvaro Obregon 64, San Luis Potosi 78000, Mexico;

    Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, Alvaro Obregon 64, San Luis Potosi 78000, Mexico;

    IPICYT, Adv Mat Dept, Camino Presa San Jose 2055,Col Lomas 4A Secc, San Luis Potosi 78216, Mexico;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Al oxidation; Resistive memory; Nonvolatile memory; Carbon nanotubes;

    机译:铝氧化;电阻记忆;非易失性记忆;碳纳米管;

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