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Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

机译:水平排列纳米线阵列的石墨烯基氧化钒复合半导体薄膜的制备与表征

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Highly oriented crystalline hybrid thin films primarily consisting of Magneli-phase VO2 and conductive graphene nanoplatelets are fabricated by a sol-gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VOx) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 angstrom and a crystallographic tensile strain of 0.83%. In addition, GO-derived VOx composite semiconducting films, which have an sp(3)/sp(2) bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of -20 degrees C to 140 degrees C, with a transition temperature of approximately 65 degrees C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template aswell as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magneli-phase VOx composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. (C) 2016 Elsevier B.V. All rights reserved.
机译:通过浸渍热解通过溶胶-凝胶法制备主要由Magneli相VO2和导电石墨烯纳米片组成的高取向晶体杂化薄膜。化学,微观结构和电学分析的组合显示,氧化石墨烯(GO)模板化的钒氧化物(VOx)纳米复合材料薄膜具有垂直堆叠的多层纳米结构,该多层纳米结构由沿着(hk0)的水平排列的钒氧化物纳米线(VNW)阵列组成在GO模板上的一组平面,平均微晶尺寸为41.4埃,晶体学拉伸应变为0.83%。此外,GO衍生的VOx复合半导体膜的sp(3)/ sp(2)键合比为0.862,在-20摄氏度至140摄氏度的温度范围内显示出热感应电开关特性,且转变温度约为65摄氏度。我们将这些结果归因于GO板的使用,GO板用作形态学生长模板以及电化学可调平台,可增强电荷载流子迁移率。此外,实验研究表明,基于石墨烯的Magneli相VOx复合半导体膜由于其出色的热电动力学特性和平面型VNW引起的高表面电荷密度,可用于高级热敏智能传感/开关应用。 (C)2016 Elsevier B.V.保留所有权利。

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