机译:磁控溅射制备不同厚度拓扑绝缘子Bi2Se3薄膜的电输运性质和形貌
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China;
Southwest Jiaotong Univ, Minist Educ, Superconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China|Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia;
Topological insulator; Thickness; Weak antilocalization;
机译:溅射功率和压力对磁控溅射制备的拓扑绝缘体Bi2Se3薄膜形态和电气传输性能的影响
机译:在磁控溅射中生长的拓扑绝缘体Bi2Se3薄膜中的厚度依赖式运输通道
机译:通过DC磁控溅射制备的晶体Bi2Se3拓扑绝缘体膜
机译:厚度对氮化锆薄膜的微观结构,电和光学性质在室温下DC反应磁控溅射制备的氮化锆薄膜
机译:超导体-绝缘体过渡附近超薄非晶态铋薄膜的电输运性质
机译:磁控溅射生长的拓扑绝缘体Bi2Se3薄膜中取决于厚度的传输通道
机译:磁控溅射制备的低电阻率MO薄膜的电气和形态学性能