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机译:a-GeSn / c-Ge的低温(约150摄氏度)固相外延形成高Sn浓度(约8%)的GeSn
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan|8 Ichiban Cho,Chiyoda Ku, Tokyo 1028472, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Germanium selenide; Solid-phase epitaxy; Low-temperature crystallization; Multi-function large-scale integrated circuit; X-ray diffraction;
机译:低温(<= 250摄氏度)下绝缘衬底上非晶GeSn的厚度依赖性固相结晶
机译:a-GeSn / c-Si结构固-液共存退火过程中富锗SiGe的超低温(≤300℃)生长
机译:低温分子束外延在Si中生长的超薄Ge(GeSn)层的光电导性
机译:低温(180°C)下弱激光辐照增强固相结晶在绝缘体上GeSn中随厚度变化的取代Sn浓度
机译:用于光电器件的GeSn薄膜外延和量子阱
机译:低温磁控溅射法生长的Sn含量高达7%的高质量GeSn层
机译:弱激光辐照增强绝缘子上高取代度sn浓度(~10%)Gesn的低温(<200 oC)固相结晶
机译:低温固相外延生长高效si太阳能电池