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Study of low temperature rf-sputtered Mg-doped vanadium dioxide thermochromic films deposited on low-emissivity substrates

机译:低温射频溅射镁掺杂二氧化钒热致变色膜沉积在低发射率基板上的研究

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摘要

Undoped VO2 was fabricated by RF sputtering from metallic target on low emissivity glass substrates at a record low growth temperature. The structure of the films was examined by X-Ray Diffraction where as temperature dependence transmittance was employed for monitoring the film's thermochromic properties. Thermochromic VO2 could be achieved at the substrate temperature of 300 degrees C which is the lowest growth temperature of VO2 phase by sputtering reported in literature without any additional post-deposition annealing treatment of the films. The thermochromic properties obtained for undoped VO2 were: luminous transmittance of 36.2%, metal-to-insulator transition temperature at 55.7 degrees C and infrared transmittance modulation Delta T-IR, (transmittance difference in the infrared, at lambda = 2000 nm, when heated from 25 degrees C to 90 degrees C) by 20.5% and solar transmittance modulation Delta T-sol = 5.2%. Subsequently, magnesium (Mg) was introduced in the structure of thermochromic VO2 up to 2.4 at.%, and the Mg-induced changes in thermochromisity were examined. By increasing the amount of Mg in VO2 structure the visible transmittance increased up to 70%. Improvement in thermochromic characteristics was observed for atomic percentage of Mg up to 0.3% above which the films tend to be non-thermochromic. The optimum atomic percentage of Mg (0.3 at.%) leads to thermochromic VO2 with the characteristic lowest phase transition temperature at 49.2 degrees C, luminous transmittance T-Ium = 46.6% and solar transmittance modulation Delta T-sol = 2.8% and Delta T-IR = 13%. Overall, 70 nm thick thermochromic VO2 films deposited at the low substrate temperature of 300 degrees C and low deposition rate 0.75 nm/min when doped with Mg up to 0.3 at.% resulted in vanadium dioxide with improved thermochromic properties is regarded as particularly promising for smart windows applications on flexible substrates. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过射频溅射在创纪录的低生长温度下,将金属靶材放在低发射率的玻璃基板上制成未掺杂的VO2。通过X射线衍射检查膜的结构,其中使用温度依赖性透射率来监测膜的热致变色性质。可以通过文献报道的溅射在基板温度300℃(VO2相的最低生长温度)下获得热致变色VO2,而无需对膜进行任何额外的沉积后退火处理。对于未掺杂的VO2,获得的热致变色性质为:36.2%的透光率,55.7摄氏度下的金属-绝缘体转变温度和红外透射率调制Delta T-IR(加热时在λ= 2000 nm时红外的透射率差)从25摄氏度到90摄氏度)降低了20.5%,太阳光透射率调制ΔT-sol = 5.2%。随后,将镁(Mg)引入热变色VO2的结构中,直至2.4 at。%,并检查了Mg引起的热致变色性变化。通过增加VO2结构中的Mg含量,可见光透射率提高了70%。对于Mg的原子百分数,观察到热致变色特性的改善,最高达0.3%,高于该百分比膜往往是非热致变色的。 Mg(0.3 at。%)的最佳原子百分比会导致热变色VO2,其特征相变温度最低,为49.2摄氏度,透光率T-Ium = 46.6%,日光透射率调制Delta T-sol = 2.8%和Delta T -IR = 13%。总体上,在300摄氏度的低基板温度和0.75纳米/分钟的低沉积速率下掺杂70%的Mg所产生的70纳米厚热致变色VO2薄膜被认为具有改善的热致变色特性的二氧化钒被认为特别有前景。柔性基板上的智能窗户应用。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Thin Solid Films》 |2016年第29期|99-105|共7页
  • 作者单位

    Univ Crete, Dept Phys, POB 2208, Iraklion 71003, Crete, Greece|Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

    Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

    Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

    Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

    Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

    Univ Crete, Dept Phys, POB 2208, Iraklion 71003, Crete, Greece|Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

    Fdn Res & Technol FORTH Hellas, Inst Elect Struct & Laser IESL, POB 1385, Iraklion 71003, Crete, Greece;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Vanadium dioxide; Low vanadium dioxide growth temperature; Magnesium doping; Thermochromic materials; Metal-to-insulator transition; Optical properties;

    机译:二氧化钒;二氧化钒生长温度低;镁掺杂;热致变色材料;金属到绝缘体的转变;光学性能;

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