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Photoelectrochemical performance of cadmium sulfide quantum dots modified titania nanotube arrays

机译:硫化镉量子点修饰的二氧化钛纳米管阵列的光电化学性能

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The cadmium sulfide quantum dots modified titania nanotube arrays (CdS QDs/TiO2 NTAs) were prepared through a sequential sonication-assisted chemical bath deposition (CBD) process. The morphology and microstructure of CdS QDs/TiO2 NTAs were characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffraction spectroscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy and UV-vis diffuse reflectance spectroscopy. The photoelectrochemical performance of CdS QDs/TiO2 NTAs was investigated under solar light illumination. The affecting parameters were studied including the nanotube length of TiO2 NTAs, CBD cycles of CdS QDs and the annealing treatment of CdS QDs/TiO2 NTAs. CdS QDs synthesized through 8 CBD cycles could uniformly cover on the tube walls of TiO2 NTAs to form unique CdS QDs/TiO2 NTAs with an open pore mouth. The appropriate annealing treatment at 400 degrees C for 60 min in N-2 atmosphere could improve the crystallinity of CdS QDs, and accordingly enhance the photovoltaic properties of CdS QDs/TiO2 NTAs. Significantly, the nanotube length was the predominant factor affecting photoelectrochemical performance of CdS QDs/TiO2 NTAs. The unannealed CdS QDs/TiO2 NTAs with an optimal nanotube length of 12 mu m achieved a short-circuit photocurrent density of 4.37 mA cm(-2), an open circuit photovoltage of 1.10 V and a top photoconversion efficiency of 3.56%. Comparatively, the annealed CdS QDs/TiO2 NTAs with an optimal nanotube length of 4 mu m achieved a short-circuit photocurrent density of 6.31 mA cm(-2), an open circuit photovoltage of 1.23 V and a top photoconversion efficiency of 4.18%. The suitable modification of crystalline CdS QDs could well improve the photoelectrochemical performance of TiO2 NTAs photoanode. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过连续超声辅助化学浴沉积(CBD)工艺制备了硫化镉量子点修饰的二氧化钛纳米管阵列(CdS QDs / TiO2 NTAs)。利用扫描电子显微镜,透射电子显微镜,X射线衍射光谱,能量色散X射线光谱,拉曼光谱和紫外可见漫反射光谱对CdS QDs / TiO2 NTA的形貌和微观结构进行了表征。研究了CdS QDs / TiO2 NTA在太阳光照射下的光电化学性能。研究了TiO2 NTAs的纳米管长度,CdS QDs的CBD循环以及CdS QDs / TiO2 NTAs的退火处理等影响参数。通过8个CBD循环合成的CdS QD可以均匀地覆盖在TiO2 NTA的管壁上,形成独特的CdS QDs / TiO2 NTA,且具有开放的孔口。在N-2气氛中在400摄氏度下进行适当的退火处理60分钟,可以提高CdS QDs的结晶度,从而增强CdS QDs / TiO2 NTA的光电性能。值得注意的是,纳米管的长度是影响CdS QDs / TiO2 NTAs光电化学性能的主要因素。纳米管的最佳长度为12μm的未退火CdS QDs / TiO2 NTA的短路光电流密度为4.37 mA cm(-2),开路光电压为1.10 V,最高光转换效率为3.56%。相比之下,最佳纳米管长度为4μm的退火CdS QDs / TiO2 NTA的短路光电流密度为6.31 mA cm(-2),开路光电压为1.23 V,最高光转换效率为4.18%。对CdS量子点进行适当的修饰可以很好地改善TiO2 NTAs光阳极的光电化学性能。 (C)2015 Elsevier B.V.保留所有权利。

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