Sub-10nm multicomponent oxide with forming-free resistive switching characteristics

摘要

This paper reports on the resistive switching (RS) characteristics of a multicomponent oxide memory device based on a 9-nm amorphous active layer of (HfCuAlTi)O-x. The proposed device exhibits forming-free unipolar RS properties with relatively low operating voltage (< 1.52 V), high resistance ratio, and stable retention. The current density of similar to 1.17 x 10(-1) nA/mu m(2) in the ON state is nearly three orders of magnitude higher than in the OFF state, as measured using a conductive atomic force microscope. These results confirm that resistive switching is dominated by oxygen vacancies providing filamentary conduction through the film.