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High performance piezoresistive response of nanostructured ZnO/Ag thin films for pressure sensing applications

机译:用于压力传感应用的纳米结构ZnO / Ag薄膜的高性能压阻响应

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This work reports on the preparation and characterization of zigzag nanostructured silver (Ag) doped zinc oxide (ZnO) films in order to improve piezoresistive response for pressure sensor applications. ZnO/Ag thin films were prepared by Glancing Angle Deposition (GLAD) from a metallic zinc (Zn) target DC sputtered in Ar + O-2 atmosphere. The target was customized with different amounts of Ag pellets, symmetrically distributed along the preferential erosion area.It is shown that increasing the Ag content from O to 36 at.% in the ZnO/Ag system leads to a decrease of the electrical resistivity from 2.95 Omega cm to 1.52 x 10(-5) Omega cm. The structural characterization of the thin films shows an evolution of the preferential growth, changing from a polycrystalline ZnO hexagonal-like structure, confirmed by the presence of dominant ZnO (002) and ZnO (101) diffraction peaks, to a Ag cubic (fcc)-like structure, as evidenced by the Ag (111), (200) and (220) diffraction peaks. The values of the gauge factor show a strong contribution both from Ag as well as from the zigzag nanostructure to the piezoresistive sensitivity of the films, in particular for Ag concentrations lower than 30 at.%. The tunneling distance between pairs of Ag conducive nanoregions was calculated for the different samples and in three different deformation regions, in order to evaluate its influence on the piezoresistive sensitivity. The results show that a longer distance between Ag particles, which varies from 0.1 to 10 nm, enhances the gauge factor, which ranges from 8 +/- 1 to 120 +/- 3, respectively.
机译:这项工作报告了锯齿形纳米结构的银(Ag)掺杂的氧化锌(ZnO)膜的制备和表征,以改善压力传感器应用的压阻响应。 ZnO / Ag薄膜是通过掠射角沉积(GLAD)由在Ar + O-2气氛中溅射的金属锌(Zn)目标DC制备的。靶材采用不同数量的Ag球粒定制,沿优先腐蚀区对称分布,结果表明,ZnO / Ag系统中的Ag含量从O增加到36 at。%导致电阻率从2.95降低Ω厘米至1.52 x 10(-5)Ω厘米。薄膜的结构特征显示优先生长的演变,从多晶体的ZnO六角形结构(由主要的ZnO(002)和ZnO(101)衍射峰的存在证实)变为Ag立方(fcc) Ag(111),(200)和(220)衍射峰证明了类似的结构。规格因子的值显示出来自Ag以及之字形纳米结构对膜的压阻敏感性的强烈贡献,特别是对于低于30at。%的Ag浓度。计算了不同样品和在三个不同变形区域中成对的Ag导电纳米区域之间的隧穿距离,以评估其对压阻灵敏度的影响。结果表明,Ag颗粒之间的距离越长(介于0.1到10 nm之间),可以提高规格系数,该规格因子分别在8 +/- 1到120 +/- 3的范围内。

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