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首页> 外文期刊>Thin Solid Films >Protective layer for cycloolefin polymer against an aromatic solvent prepared by chemical vapor deposition using cyclosiloxane as a raw molecule
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Protective layer for cycloolefin polymer against an aromatic solvent prepared by chemical vapor deposition using cyclosiloxane as a raw molecule

机译:通过使用环硅氧烷作为原料分子的化学气相沉积制得的用于环烯烃聚合物的芳族溶剂保护层

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A chemical vapor deposition (CVD) process on the basis of a closed cell system for organosilane coating on cyclo-olefin polymer (COP) has been developed in order to provide the polymer with the resistivity against aromatic solvents. Prior to the CVD coating, a COP substrate had been made hydrophilic through the surface oxidation with active oxygen species, that is, atomic oxygen and ozone, generated with vacuum ultra-violet (WV) irradiation at 172 nm in wavelength to atmospheric oxygen molecules. Next, the substrate, cyclosiloxane (tetramethyl-cyclotetrasiloxane, TMCTS) and water liquids were sealed in a closed reaction cell and kept at 80 degrees C. The substrate was exposed for 3 h to vaporize TMCTS and water so that hydrolyzed TMCTS molecules were chemisorbed and then condensed on the hydrophilic surface, resulting in the formation of a thin film with a thickness about 50 nm. The film was transparent in the visible range. The COP substrate coated with a TMCTS-CVD film showed a resistivity to m-xylene to some extent. When a second TMCTS layer was deposited on a first TMCTS layer that had been rinsed in water and then hydrophilized with VUV oxidation, the resistivity to m-xylene has been much improved. As another approach to improve the solvent resistivity, a monolayer of fluoroalkylsilane (FAS, 1H,1H,2H,2H-tridecafluoro-n-octyltriethoxysilane) was formed on the hydrophilized TMCTS film by a vapor phase method. This FAS-TMCTS double layered film showed an excellent resistivity against m-xylene, most likely because a solvent repellency was provided by the FAS monolayer. (C) 2017 Elsevier B.V. All rights reserved.
机译:为了使聚合物具有对芳族溶剂的抗性,已经开发了基于用于在环烯烃聚合物(COP)上的有机硅烷涂层的闭孔系统的化学气相沉积(CVD)工艺。在进行CVD涂层之前,已经通过用活性氧物质(即原子氧和臭氧)进行表面氧化,使COP基板亲水化,该活性氧是通过在波长为172 nm的真空紫外线(WV)照射下产生的,与大气中的氧分子产生的。接下来,将底物,环硅氧烷(四甲基-环四硅氧烷,TMCTS)和水液体密封在密闭的反应池中,并保持在80摄氏度下。将底物暴露3小时以蒸发TMCTS和水,以便水解的TMCTS分子被化学吸附和然后冷凝在亲水表面上,从而形成厚度约50nm的薄膜。该膜在可见光范围内是透明的。涂有TMCTS-CVD膜的COP基材在一定程度上显示出对间二甲苯的电阻率。当将第二TMCTS层沉积在已在水中冲洗,然后通过VUV氧化进行亲水处理的第一TMCTS层上时,对间二甲苯的电阻率已大大提高。作为提高耐溶剂性的另一种方法,通过气相法在亲水化的TMCTS膜上形成单层的氟代烷基硅烷(FAS,1H,1H,2H,2H-三氟邻氟代正辛基三乙氧基硅烷)。这种FAS-TMCTS双层膜显示出极好的对间二甲苯的电阻率,这很可能是因为FAS单层提供了拒溶剂性。 (C)2017 Elsevier B.V.保留所有权利。

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