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首页> 外文期刊>Thin Solid Films >Corrosion behaviour and microstructure of tantalum film on Ti6Al4V substrate by filtered cathodic vacuum arc deposition
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Corrosion behaviour and microstructure of tantalum film on Ti6Al4V substrate by filtered cathodic vacuum arc deposition

机译:过滤阴极真空电弧沉积在Ti6Al4V基体上钽膜的腐蚀行为和微观结构

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Tantalum(Ta) films of about 100 nm in thickness were fabricated onto Ti6Al4V substrate using a filtered cathodic vacuum arc deposition system with and without a - 100 V bias between the substrate and the chamber wall. The structure of the deposited film at zero substrate bias exhibits pure tetragonal phase (beta-Ta), and body-centred cubic structure (alpha-Ta) is found as the substrate bias increased to -100 V. The film deposited at -100 V bias shows a significant improvement in cohesion as compared to the film deposited without substrate bias. Potentiodynamic polarization and electrochemical impedance tests in phosphate buffered saline solution revealed that the Ta film at -100 V bias shows good corrosion resistance with a low corrosion current density of 0.009 mu A.cm(-2). The film shows hydrophobic characteristics, low surface free energy and an inert surface presenting a uniform oxide layer, which is promising for potential biomedical implant applications. (C) 2017 Elsevier B.V. All rights reserved.
机译:使用过滤的阴极真空电弧沉积系统在Ti6Al4V基板上制作了厚度约为100 nm的钽(Ta)膜,基板与腔室壁之间有和没有-100 V偏压。在零衬底偏压下的沉积膜结构表现出纯正的四方相(β-Ta),随着衬底偏压增加到-100 V,发现了以体心立方结构(alpha-Ta)。在-100 V时沉积的膜与没有基板偏压的沉积膜相比,偏压显示出内聚力的显着改善。在磷酸盐缓冲盐溶液中的电位动力学极化和电化学阻抗测试表明,在-100 V偏压下的Ta膜显示出良好的耐腐蚀性,且腐蚀电流密度为0.009μA.cm(-2)。该膜具有疏水性,低表面自由能和呈均匀氧化层的惰性表面,有望用于潜在的生物医学植入物应用。 (C)2017 Elsevier B.V.保留所有权利。

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