CuInSe2 nanostructures prepared by chemical close-spaced vapor transport for hybrid photovoltaic devices

摘要

This work focuses on the fabrication of stoichiometric CulnSe(2) nanostructures with controllable physical parameters of the nanocrystals suitable for hybrid organic/inorganic photovoltaics. CuInSe2 nanostructures were prepared by the chemical close-spaced vapor transport (CCSVT) method onto Mo/barrier/glass substrates by using an In2Se3 source material and Cu precursors. The In2Se3 source material was volatilized in H-2 ambience with the addition of HCl vapors at 550 degrees C. Three different types of Cu precursors were used: (i) Cu thin films (6-250 nm thick) deposited by e-beam, (ii) Cu nanoparticles prepared by spray pyrolysis and (iii) Cu nanostructures formed by applying the nanosphere lithography (using a monolayer of 450 nm nanospheres). The CCSVT process parameters were varied to reveal the optimum conditions for the preparation of secondary phases free CuInSe2 nanostructures.