Development of high dielectric dual phase [Bi4Ti3O12](X)-[CaCu3Ti4O12](1) (-) (X) nanocomposite thin films for modern microelectronic device applications

摘要

A dual phase system with different compositions (X = 0, 0.2, 0.4, 0.6, 0.8,1.0) of (Bi4Ti3O12)(x)-(CaCu3Ti4O12)(1) (-) (x) [(BTO)(x)-(CCTO)(1) (-) (x)] thin films have been grown on a platinized silicon substrate using the spin-coating technique. The X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FE-SEM), and Raman results show that the two different crystal phases, orthorhombic BTO and cubic CCTO exist together within the thin film matrices. The effect of BTO phase concentration on the dielectric and the P-E hysteresis behavior of the composites was investigated. In an unexpected observation, the incorporation of CCTO into BTO is found to enhance the dielectric constant of the nanocomposite, in accordance with the percolation theory. The ferroelectric hysteresis (P-E) loops were altered with relating to stoichiometry compositions. Near the percolation threshold for 20 mol% BTO with 80 mol% CCTO in composite, high dielectric constant (similar to 6378), and high coercivity (similar to 162 kV/cm) is obtained compared to the single phase BTO and CCTO. These results show that the (Bi4Ti3O12)(0.2)-(CaCu3Ti4O12)(0.8) is a good candidate for the miniaturization of modem microelectronic devices. (C) 2017 Published by Elsevier B.V.