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Adhesion and tribological properties of gradient designed a-C film on ultrahigh molecular weight polyethylene

机译:梯度设计的a-C薄膜在超高分子量聚乙烯上的附着力和摩擦学性能

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摘要

Amorphous carbon (a-C) film is deposited with a gradient designed bias voltage on the ultrahigh molecular weight polyethylene (UHMWPE) substrates and Si3N4 balls via a closed field unbalanced magnetron sputtering. The designed bias voltage continuously increases from -40 V to -80 V with two different increasing rate. The film with a thickness of approximately 1000 nm is made up of equiaxed grains with size of around 20 nm. Nano indentation tests show that the hardness of the UHMWPE increases from 44 MPa to 2.16 GPa after deposition of a-C film with gradient designed bias voltage. The wear rate and friction coefficient of the a-C film sliding against a-C films coated on Si3N4 balls is tested in air and Hank's solution by means of a reciprocating tribometer. The a-C film deposited with gradient bias voltage exhibits superior adhesion and tribological performance, compared with those deposited with balanced bias voltage. The a-C film wearing against Si3N4 balls with a-C film coating shows a lower wear rate, compared with a-C films wearing against uncoated balls, decreasing from 1.95 x 10(-15) m(3) N-1 m(-1) to 1.23 x 10(-15) m(3) N-1 m(-1). There is a further enhancement of the anti-wear performance in Hank's solution. (C) 2017 Elsevier B.V. All rights reserved.
机译:非晶碳(a-C)膜通过闭合场不平衡磁控溅射,以梯度设计的偏置电压沉积在超高分子量聚乙烯(UHMWPE)基板和Si3N4球上。设计的偏置电压以两种不同的增长率从-40 V连续增加到-80V。厚度约为1000 nm的薄膜是由等轴晶粒组成,尺寸约为20 nm。纳米压痕测试表明,使用梯度设计的偏置电压沉积a-C膜后,UHMWPE的硬度从44 MPa增加到2.16 GPa。通过往复式摩擦计在空气和汉克溶液中测试a-C膜在涂覆在Si3N4球上的a-C膜上滑动时的磨损率和摩擦系数。与采用平衡偏置电压沉积的a-C膜相比,采用梯度偏置电压沉积的a-C膜表现出优异的附着力和摩擦学性能。与无涂层球磨损的aC膜相比,在带有SiC涂层的Si3N4球上磨损的aC膜的磨损率更低,从1.95 x 10(-15)m(3)N-1 m(-1)降低到1.23 x 10(-15)m(3)N-1 m(-1)。汉克的解决方案进一步增强了抗磨性能。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Thin Solid Films》 |2017年第28期|7-15|共9页
  • 作者单位

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China|Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China|Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China|Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China|Zhongao Huicheng Technol Co Ltd, Beijing 100176, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China|Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China;

    Zhongao Huicheng Technol Co Ltd, Beijing 100176, Peoples R China;

    Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China|Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Amorphous carbon; Gradient designed bias voltage; Adhesion; Tribological property;

    机译:非晶碳梯度设计偏压附着力摩擦学性能;

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