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机译:磁控溅射沉积氮化钽薄膜电阻器的可靠性和特性
Material Technology Center, Korea Testing Laboratory;
Material Technology Center, Korea Testing Laboratory;
Department of Electronic Materials Engineering, Kwangwoon University;
Department of Electrical Engineering, Chosun University;
Department of Electronic Materials Engineering, Kwangwoon University;
Department of Electronic Materials Engineering, Kwangwoon University;
Global Campus, Gachon University;
Department of Electronic Materials Engineering, Kwangwoon University;
Direct current magnetron sputter; Tantalum nitride; Thin film resistor; Nitrogen partial pressure; Reliability; Accelerated degradation test;
机译:磁控溅射沉积钽和氮化钽薄膜:相,硬度和组成分析
机译:反应性直流磁控溅射沉积氮化钽薄膜的微结构,化学和电学性能研究
机译:反应性直流磁控溅射沉积氮化钽薄膜的微结构,化学和电学性能研究
机译:通过高功率脉冲磁控溅射沉积的各种,碳纳米管在各种。纳米甘露出的氮化物膜上的增长
机译:磁控溅射合成氮化钽薄膜的表征。
机译:通过磁控溅射中氮流量的氮气流量调节的Ti-Zr三元氮化物薄膜的结构组成和等离子体特性
机译:塑料电子应用中通过反应溅射在低温下沉积的氮化钽薄膜电阻器的电,化学和形态学表征
机译:用于HmC(混合微电路)应用的氮化钽,钛和钯薄膜沉积的DC磁控溅射系统的表征。