机译:磁控溅射外延法控制GaN纳米棒阵列的定点生长
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University;
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University;
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University;
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University;
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University;
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University;
Gallium nitride; Magnetron sputter epitaxy; Selective-area growth; Nanorods; Lithography; Focused ion beam; Nanosphere;
机译:液体磁控溅射外延甘纳米棒阵列的高选择性生长
机译:Si(111)上的高质量GaN(000(1)跨条)纳米棒的液体目标反应磁控溅射外延
机译:超高真空磁控溅射外延自发形成AlInN核壳纳米棒阵列。
机译:高价磁控溅射外延产生的高质量GaN的光学特征
机译:射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
机译:N2分压对液靶反应磁控溅射外延沉积GaN纳米棒生长结构和光学性能的影响
机译:用磁控溅射外延综述GaN薄膜和纳米棒生长