...
首页> 外文期刊>Thin Solid Films >Strain relaxation and transport properties of epitaxial Pr_(0.5)Ba_(0.5)MnO_(3-δ) thin films
【24h】

Strain relaxation and transport properties of epitaxial Pr_(0.5)Ba_(0.5)MnO_(3-δ) thin films

机译:外延Pr_(0.5)Ba_(0.5)MnO_(3-δ)薄膜的应变弛豫和传输特性

获取原文
获取原文并翻译 | 示例
           

摘要

Highly epitaxial Pr0.5Ba0.5MnO3-δ(PBMO) thin films were fabricated on (001) LaAlO3substrates with various growth temperatures by using pulsed laser deposition system. Confirmed by x-ray diffraction and transmission electron microscopy, all the films arec-axis orientation and the strain induced by the lattice misfit is fully relaxed by the form of dislocations. By increasing the growth temperature, the film qualities and oxygen vacancies increase. The transport properties of the films follow variable range hopping and only depend on the film quality. However, the magnetic properties are related to the competition between the film quality and the oxygen content in it. The film quality dominated the magnetic properties of the film grown at 560 °C, since the largest tilt of the crystalline plane leads to the antiferromagnetic takes charge of the magnetic properties. The quality of the film grown at 720 °C is the best, but the relatively small oxygen content in it make its magnetic moment lower than that grown at 640 °C. The film grown at 640 °C with the optimal crystal quality and oxygen content exhibits the maximum magnetic moment. These phenomena indicate that the physical properties of PBMO thin film are highly dependent on its microstructure, and a desired property can be achieved by tuning its growth temperature.
机译:利用脉冲激光沉积系统在(001)LaAlO3衬底上以不同的生长温度制备了高外延的Pr0.5Ba0.5MnO3-δ(PBMO)薄膜。通过X射线衍射和透射电子显微镜确认,所有的薄膜都是c轴取向,并且由于位错的形式,晶格失配所引起的应变得以完全释放。通过提高生长温度,薄膜质量和氧空位增加。薄膜的传输特性遵循可变范围跳变,并且仅取决于薄膜质量。然而,磁性与膜质量和其中的氧含量之间的竞争有关。薄膜质量决定了在560°C下生长的薄膜的磁性,这是因为晶面的最大倾斜导致反铁磁性控制了磁性。在720 C下生长的薄膜质量最好,但是其中的氧含量相对较低,使其磁矩比在640 C下生长的膜低。在640 C下生长的具有最佳晶体质量和氧含量的薄膜表现出最大的磁矩。这些现象表明PBMO薄膜的物理性能高度依赖于其微观结构,并且可以通过调节其生长温度来获得所需的性能。

著录项

  • 来源
    《Thin Solid Films》 |2018年第30期|399-404|共6页
  • 作者单位

    State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University,School of Microelectronics, Xi'an Jiaotong University,Science and Technology on Low-Light-Level Night Version Laboratory;

    State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University;

    School of Microelectronics, Xi'an Jiaotong University;

    School of Microelectronics, Xi'an Jiaotong University;

    School of Microelectronics, Xi'an Jiaotong University;

    School of Microelectronics, Xi'an Jiaotong University;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Strain relaxation; Oxygen vacancies; Magnetic properties; Electrical conduction;

    机译:应变松弛氧空位磁性导电;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号