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Influence of CO_2 addition on hydrogen and oxygen surface bonding onto nanostructured diamond thin film surfaces deposited at low substrate temperatures

机译:添加CO_2对在低基材温度下沉积的纳米结构金刚石薄膜表面上氢和氧表面键合的影响

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In this work, hydrogen and oxygen chemisorption onto nanocrystalline diamond films deposited using CH4/H-2/CO2 precursor gas mixture by hot-filament chemical vapor deposition were investigated. The deposition was carried out with a specially designed substrate force-cooling setup at back substrate temperatures (T-b) of 200, 450 and 730 degrees C. For a similar gas phase activation and composition, high-resolution scanning electron microscopy shows that films deposited at T-b = 200 degrees C display nanostructure morphology while the increase in T-b results in an increase in grain size. Raman scattering, X-ray photoelectron spectroscopy and high-resolution electron energy loss spectroscopy analyses revealed that addition of CO2 influences the surface composition and bonding configuration of the diamond films. CO2 addition in the gas mixture resulted in improving the quality of the films by reducing C=C carbon during the growth process nonetheless it also substantially increases the C-O bonds at the grain boundaries and on the diamond crystallites surfaces and reduces their C-H concentration.
机译:在这项工作中,研究了氢和氧化学吸附到CH4 / H-2 / CO2前驱体气体混合物通过热丝化学气相沉积法沉积到的纳米晶金刚石膜上。使用专门设计的基板力冷却装置在200、450和730摄氏度的后基板温度(Tb)下进行沉积。对于类似的气相活化和组成,高分辨率扫描电子显微镜显示在Tb = 200摄氏度显示纳米结构形态,而Tb的增加导致晶粒尺寸增加。拉曼散射,X射线光电子能谱和高分辨率电子能量损失能谱分析表明,CO2的添加会影响金刚石膜的表面组成和键合结构。在混合气体中添加二氧化碳可通过减少生长过程中的C = C碳来提高薄膜的质量,但它也显着增加了晶界和金刚石微晶表面的C-O键,并降低了C-H浓度。

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