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首页> 外文期刊>Thin Solid Films >Effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of Eu-doped SnO_2 thin films prepared by a metal organic decomposition method
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Effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of Eu-doped SnO_2 thin films prepared by a metal organic decomposition method

机译:退火温度和Eu浓度对金属有机分解法制备的Eu掺杂SnO_2薄膜结构和光致发光性能的影响

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摘要

In this study, Eu-doped SnO2 thin films were prepared by a metal organic decomposition method through a pyrolysis of organic acid salts. The effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of the films were investigated. X-ray diffraction measurements showed that the crystal structure corresponded to tetragonal rutile SnO2 regardless of the annealing temperature or Eu concentration. Additionally, X-ray diffraction, Fourier transform infrared spectroscopy and atomic force microscopy measurements indicated an improvement in crystalline quality with increasing annealing temperature. Photoluminescence spectra exhibited Eu-related emissions around 588-599 nm and 620 nm. It was found that the photoluminescence properties were strongly dependent on both the annealing temperature and Eu concentration. The highest photoluminescence intensity around 588-599 nm was obtained for an Eu concentration of 7.2 at.% for samples annealed at 1000 degrees C.
机译:在这项研究中,通过有机酸盐的热解,通过金属有机分解法制备了Eu掺杂的SnO2薄膜。研究了退火温度和Eu浓度对薄膜结构和光致发光性能的影响。 X射线衍射测量表明,无论退火温度或Eu浓度如何,晶体结构均对应于四方金红石型SnO2。此外,X射线衍射,傅立叶变换红外光谱和原子力显微镜测量表明,随着退火温度的升高,晶体质量得到改善。光致发光光谱显示出在588-599 nm和620 nm附近的Eu相关发射。发现光致发光特性强烈地取决于退火温度和Eu浓度。对于在1000摄氏度下退火的样品,Eu浓度为7.2 at。%时,可获得约588-599 nm的最高光致发光强度。

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