Low-temperature ultrasonic spray deposited aluminum doped zinc oxide film and its application in flexible Metal-Insulator-Semiconductor diodes

摘要

In this work, the fabrication and characterization of fully solution-processed flexible Metal-InsulatorSemiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass as semiconductor and insulator, respectively. The maximum temperature used was 200 degrees C. The electrical characteristics of the flexible devices show a good agreement with the typical characteristics of a semiconductor diode even while bent to 5 mm tensile radius.