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首页> 外文期刊>Thin Solid Films >Potentiostatically pretreated electrochromic tungsten oxide films with enhanced durability: Electrochemical processes at interfaces of indium-tin oxide
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Potentiostatically pretreated electrochromic tungsten oxide films with enhanced durability: Electrochemical processes at interfaces of indium-tin oxide

机译:恒电位预处理的电致变色氧化钨薄膜,具有增强的耐用性:铟锡氧化物界面的电化学过程

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摘要

Recent work has shown that electrochromic WO3 films, backed by In2O3:Sn (ITO) and immersed in a lithium-ion-conducting electrolyte, can attain unprecedented electrochemical cycling durability after potentiostatic pretreatment at high voltage. Here we demonstrate that this intriguing feature is associated with changes in the properties of the ITO film. Specifically, we studied thin films of ITO and WO3/ITO immersed in an electrolyte of LiClO4 in propylene carbonate at potentials up to 6.0 V vs. Li/Li+ by cyclic voltammetry and impedance spectroscopy and present evidence that electrochemical reactions occur under these conditions. X-ray photoemission spectroscopy indicated that the ITO film was partly dissolved at high voltages and that the dissolution reaction promoted diffusion of In and Sn into the WO3 film.
机译:最近的工作表明,在In2O3:Sn(ITO)的支持下并浸入锂离子导电电解质中的电致变色WO3膜在高压下进行恒电位预处理后,可以获得前所未有的电化学循环耐久性。在这里,我们证明了这种有趣的功能与ITO膜的性能变化有关。具体而言,我们通过循环伏安法和阻抗谱研究了浸入碳酸亚丙酯中的LiClO4的电解质中的ITO和WO3 / ITO薄膜,其相对于Li / Li +的电势高达6.0 V,并且通过循环伏安法和阻抗谱进行了研究,并提供了在这些条件下发生电化学反应的证据。 X射线光电子能谱表明,ITO膜在高压下部分溶解,并且溶解反应促进了In和Sn向WO 3膜中的扩散。

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