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AGAINST SULFURIC ACID ATTACK OF PASSIVE FILM FORMED ON SUS 304 STAINLESS STEEL IN FLUORIDE SOLUTIONS

机译:SUS 304不锈钢在氟化物溶液中形成的钝化膜的硫酸攻击。

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Electrochemical conditions for improving the resistance to active corrosion of SUS 304 stainless steel using potentiostatic pretreatment in a total fluoride concentration of .kmollm*. m~-3 solution with various pH at 303K were studied. Active corrosion susceptibility after treatment was evaluated by measuring the self-activation time,τa, in deaerated 1.0 kmol lm~-3 sulfuric acid solution at 303K. In an acidic fluoride solution, maximum stability is obtained at -0.4V(SCE) of pretreatment potential in a solution pH of 1.8.XPS analysis of treated steels showed the Cr content extensively increased in the oxide layer of passive film improving resistance to active corrosion, and F ions located in the hydroxide layer, assuming that passive film consists of three layers, hydrocarbon contaminant covering a hydroxide layer of Cr and an underlying Cr and Fe oxide layer. In a neutral solution, maximum stability is obtained at 0.6V(SCE) of pretreatment potential in a solution pH of 8.6.Cr enrichment was not seen in the passive film by SPS. A nodic polarization measurements suggest that structural changes in the passive film take place at 0.6V(SCE).In an alkaline solution, however , treated steel can not acquire a high resistance to active corrosion over a wide range of potentials for pretreatment. XPS showed that the hydroxide layer of passive film was very thin compared to that formed in an acidic solution and F ions were entirely absent in the passive film.
机译:使用恒电位预处理在总氟化物浓度为.kmollm *的条件下改善SUS 304不锈钢的抗主动腐蚀性能的电化学条件。研究了在303K下各种pH的m〜-3溶液。通过测量在303K下脱气的1.0 kmol lm〜-3硫酸溶液中的自活化时间τa来评估处理后的主动腐蚀敏感性。在酸性氟化物溶液中,在pH值为1.8的溶液中,预处理电位为-0.4V(SCE)时可获得最大稳定性.XPS分析处理过的钢后,钝化膜的氧化层中的Cr含量大大增加,从而提高了对活性腐蚀的抵抗力假设钝化膜由三层组成,碳氢化合物污染物覆盖Cr的氢氧化物层以及下面的Cr和Fe氧化物层,则F和F离子位于氢氧化物层中。在中性溶液中,在pH值为8.6的溶液中于0.6V(SCE)的预处理电位下可获得最大的稳定性。通过SPS在钝化膜中看不到Cr富集。阳极极化测量表明,钝化膜的结构变化发生在0.6V(SCE)。然而,在碱性溶液中,经处理的钢无法在宽范围的预处理潜力下获得较高的抗主动腐蚀性能。 XPS表明,与在酸性溶液中形成的相比,钝化膜的氢氧化物层非常薄,并且钝化膜中完全不存在F离子。

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