Dimerization of NO and transformation to N2O on Ge(100)

摘要

Temperature-programmed desorption studies of submonolayer coverages of nitric oxide (NO) on a Ge(100) (2 x 1) surface have previously determined the non-dissociative nature of the adsoriotion of NO on Ge(100) at 110 K. Subsequent electron bombardment results in electron-stimulated desorption of N2O and N-2 at that temperature, without heating, which is attributed to the formation of NO dimers on the cold surface. This conclusion is supported by studies of adsorbed layers of N2O, which is adsorbed at least partly non-dissociatively, and which yields little desorption of the parent N2O molecule when bombarded with electrons. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 38]