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Growth and morphology of Cobalt thin films on Pd(111)

机译:Pd(111)上钴薄膜的生长和形貌

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We report on the growth of thin Co films on Pd(111) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fee and hep stacking. Depending on the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing.
机译:我们报告了在三种不同的温度180 K,300 K和550 K上Pd(111)上Co薄膜的生长。通过扫描隧道显微镜和低能电子衍射确定了结构和形态。发现生长模式随温度变化。对于180 K和300 K,我们观察到初始层有双层生长的趋势,而在高温下,初始膜以单层生长。在大多数情况下,观察到非理想的三维生长。仅在550 K的生长温度和5 ML以上的覆盖率下才​​发现二维生长。根据温度的不同,低覆盖率的Co岛表现出三种主要不同的形状:在180 K时为树枝状,在300 K时为六边形和在550 K时为三角形。对于在550 K时生长且覆盖率超过5 ML的岛,岛变为不规则形状。这种过渡很可能是向2D增长过渡的原因。此外,通过创建具有混合费用和堆垛堆积的位错网络,可以缓解较大的压力。根据温度和覆盖率,观察到六边形或三角形网络。最后,我们研究了退火在180 K和300 K下制备的Co膜的效果。加热到490 K会导致粗化和混合。

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