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Effects of Cs treatment on field emission properties of capped carbon nanotubes

机译:Cs处理对封端碳纳米管场发射特性的影响

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Within the methodology [M. Khazaei, A.A. Farajian, Y. Kawazoe, Phys. Rev. Lett. 95 (2005) 177602] based on first-principles electronic structure calculations, the effects of Cs treatment on current emissions and emission patterns of capped carbon nanotubes are considered at low deposition densities when the nanotubes are under an electric field 0.2 V/A. The results show that the current emission from the cap with one adsorbed Cs is 3.4 times larger than the cap without any Cs. It is 9.6 times larger in the cap with two adsorbed Cs atoms. After Cs deposition the emission patterns become asymmetric (current emission from the carbon atoms located at the topmost pentagon ring close to Cs atoms is larger than the other atomic sites). There are very few localized states on Cs atoms. Hence, although the tunneling probability of electron emission from Cs atoms is significant, there is no current from Cs atoms. In addition, the effect of Cs on work function reduction of nanotubes is explained in terms of Cs deposition densities and the surface dipole moments.
机译:在方法内[M.卡扎伊(A.A.A.) Farajian,Y。Kawazoe,物理学牧师[J.Biol.Chem.95(2005)177602]基于第一性原理电子结构计算,当纳米管在0.2V / A的电场下时,在低沉积密度下考虑Cs处理对封端的碳纳米管的电流发射和发射图案的影响。结果表明,吸附有Cs的帽的电流发射是没有Cs的帽的3.4倍。在带有两个吸附的Cs原子的帽盖中,它的大小是9.6倍。在Cs沉积之后,发射模式变得不对称(位于最靠近Cs原子的最顶部五边形环处的碳原子的电流发射大于其他原子位点)。 Cs原子上很少有局部状态。因此,尽管从Cs原子发射电子的隧穿几率很大,但是没有电流从Cs原子发射。另外,用Cs沉积密度和表面偶极矩解释了Cs对纳米管功函数降低的影响。

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