Atomic geometry and electronic properties of the Ge(111)2 x 1-Sb surface studied by scanning tunneling microscopy/spectroscopy and core-level photoemission

摘要

By scanning tunneling microscopy and spectroscopy (STM/S) and high-resolution core-level photoemission using synchrotron radiation, we have investigated the atomic structure and electronic properties of Sb-induced 2 x 1 reconstruction on Ge(111). Our results support well the zigzag-chain model proposed for this phase in the literature; in particular, the STM images visualize the Sb zigzag (Seiwatz) chain in a real space, and the STS I-V spectrum suggests this surface to be semiconducting, in good agreement with the atomic configuration proposed. However, a closer inspection of the STM results does not support the buckling of Sb chains reported in earlier studies. Moreover, the analysis of the Sb 4d core-level line shape of the (2 x 1) reconstruction shows that the bonding state of the Sb atoms is very similar, suggesting an unbuckled Seiwatz chain. In addition, the Ge 3d core-level emission reveals only one component, giving evidence for the ideal bulk-terminated structure of the Ge substrate. (c) 2006 Elsevier B.V. All rights reserved.