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Reply to comment on 'The structure of monolayer SiO_2 on Mo(112): A 2-D [Si-O-Si] network or isolated [SiO_4] units?'

机译:关于“ Mo(112)上单层SiO_2的结构:2-D [Si-O-Si]网络或孤立的[SiO_4]单元?”的评论答复

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First, in response to the above Comment [1] it is important to consider the following experimental observations: (i) high resolution electron energy loss spectroscopy (HREELS) [2] and infrared reflection adsorption spectroscopy (IRAS) [3-6] show intense asymmetric vibrational modes related to Si-O-Mo (1048 cm~(-1) in HREELS and 1056-1059 cm~(-1) in IRAS), whereas no active asymmetric vibrational modes related to Si-O-Si (1176 cm~(-1) in HREELS and 1200-1250 cm~(-1) in IRAS) are in evidence for SiO_2(1 ML)/Mo(112), (see Fig. 1). These data indicate the absence of Si-O-Si species, i.e. the presence of isolated [SiO_4] units [2], or that the axis of the bonding in the Si-O-Si moities are essentially parallel to the substrate surface.
机译:首先,针对上述评论[1],重要的是要考虑以下实验观察:(i)高分辨率电子能量损失谱(HREELS)[2]和红外反射吸收光谱(IRAS)[3-6]显示与Si-O-Mo有关的强非对称振动模式(HREELS中为1048 cm〜(-1),在IRAS中为1056-1059 cm〜(-1)),而没有与Si-O-Si相关的主动非对称振动模式(1176 SiO_2(1 ML)/ Mo(112)的证据表明HREELS中的cm〜(-1)和IRAS中的1200-1250 cm〜(-1)(见图1)。这些数据表明不存在Si-O-Si物种,即存在孤立的[SiO_4]单元[2],或者表明Si-O-Si部分中的键合轴基本平行于基板表面。

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