机译:Si(110)-16×2上硅同质外延生长中的台阶聚束和台阶“旋转”
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan,Department of Physics, Tomsk State University, Lenina av. 36, Tomsk 634050, Russia;
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;
monte carlo simulations; models of surface kinetics; molecular beam epitaxy; step formation and bunching; surface diffusion; surface relaxation and reconstruction; silicon; vicinal single crystal surfaces;
机译:4H-SiC同质外延生长中巨步聚束研究:簇效应模型的建议
机译:SiC同质外延生长过程中阶跃成束机理的扩展研究
机译:在名义上平坦且阶梯状的Cu(111)表面上的同质外延生长:FCC站点与hcp堆垛层错站点中的岛形核
机译:SiC同质外延生长过程中分步成束机理的扩展研究
机译:表面物理学的理论和实验研究:钠原子在阶梯式Na(110)表面上感受到的表面电迁移风力的理论;银(001)上反铁磁性氧化镍薄膜的磁和无序相变。
机译:表皮生长因子受体和Abl2激酶调节人乳头瘤病毒16个内吞作用的明显步骤
机译:二聚体扩散作为在同性恋生长过程中逐步束缚不稳定性的驱动机制