机译:应变诱发的伪磁场及其对CVD生长的石墨烯的带电效应
Department of Physics, California Institute of Technology, Pasadena, California 91125, USA;
Department of Physics, California Institute of Technology, Pasadena, California 91125, USA;
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA;
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA;
Department of Physics, California Institute of Technology, Pasadena, California 91125, USA;
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA;
Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA;
Scanning tunneling microscopy; Scanning tunneling spectroscopies; Chemical vapor deposition; Quantum effects; Surface structure; Morphology; Topography; Carbon;
机译:石墨烯纳米气泡中应变诱导的大于300特斯拉的伪磁场
机译:掺杂Ⅱ型Weyl半型中的应变诱导的伪磁场
机译:掺杂型II堰半型中的应变诱导的伪磁场
机译:纳米级应变诱发的大伪磁场及其在铜上化学气相沉积石墨烯的充电效应
机译:低能电子束辐照对分离门测试结构上石墨烯和石墨烯场效应晶体管的影响以及石墨烯的拉曼计量。
机译:石墨烯中的巨大伪磁场谷极极化和拓扑通道的纳米级应变工程
机译:纳米尺度应变诱导的大磁场和CVD生长石墨烯在铜上的充电效应