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Electronic structure, optical and thermodynamic studies on 2D SnSe_2 nanosheet: A first-principles investigation

机译:二维SnSe_2纳米片的电子结构,光学和热力学研究:第一性原理研究

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摘要

The electronic structure, optical and thermodynamic properties of SnSe2 nanosheet were investigated using first principle calculation. Band structure of the nanosheets reveals that they are the p-type semiconductor with a band gap of 1.364 eV. Partial density of states confirms that the near at the Fermi level is mainly contributed to Se-4p electrons and the Se-4p, Sn-5s, and 5p electrons are contributed more at the conduction band. The optical properties of the SnSe2 two-dimensional nanosheet were studied in both parallel and perpendicular electric field polarizations. The dielectric, refractive and optical absorbance properties of the nanosheet indicate that the sheet is transparent. The thermodynamical properties confirm that the sheet is stable at high temperature.
机译:用第一性原理研究了SnSe2纳米片的电子结构,光学和热力学性质。纳米片的能带结构显示它们是带隙为1.364 eV的p型半导体。状态的部分密度证实费米能级附近的电子主要贡献于Se-4p电子,而Se-4p,Sn-5s和5p电子在导带处的贡献更大。在平行和垂直电场极化条件下研究了SnSe2二维纳米片的光学性质。纳米片的介电,折射和光学吸收性质表明该片是透明的。热力学性质证实了该片材在高温下是稳定的。

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