Correlation between electronic bands structure and magneto-transport properties of nanostructure type Ⅱ superlattice for terahertz detection

摘要

We have used the envelope function formalism (EFF) to investigate the bands structure, energy subbands and carrier's effective mass in the growth direction and in-plan of InAs(d(1) = 160 angstrom)/GaSb(d(2) = 105 angstrom) semimetallic superlattice. The photodetector parameters like optical band-gap, E-g, cut-off frequency, vertical bar f(c)vertical bar, and in-plan electron effective mass, m(E1)*, were calculated as a function of d(1) and/or d(2) and temperature T. E-g(R = d(1)/d(2)) indicates that the semiconductor-to-semimetal transition goes to lower R when T increases. The range of 11.6 =vertical bar f(c)(THz)vertical bar = 23.8, demonstrates that this sample can be used as a terahertz (THz) detector. For T = 141 K, our results agree with the available experimental data. Using the Boltzmann magnetic-field-dependent Hall coefficient and the magnetoresistance results of D. M. Symons et al., we have deduced the SL electronic parameters. At 141 K, the p to n-type conductivity transition was observed at B-0 = 32 T. The Fermi level, E-F = 515 meV, reveal a p-type conductivity at 300 K. (C) 2017 Elsevier Ltd. All rights reserved.