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Determination of the g-factor of n-type HgTe/Hg_(1-x)Cd_xTe single quantum wells

机译:n型HgTe / Hg_(1-x)Cd_xTe单量子阱的g因子的确定

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摘要

The effective g-factor of modulation doped n-type HgTe single quantum wells, SQWs, has been determined by the coincidence method in tilted magnetic fields to lie between 15 and 35. For symmetrically doped samples the effective g-factor has been found to be constant for different filling factors; however, for asymmetric SQWs, a large increase with increasing filling factor has been observed. This can be ascribed to a combination of Zeeman spin splitting and Rashba spin–orbit splitting. Reasonable agreement has been achieved between theoretical calculations based on the 8×8 k · p method and experimental results.
机译:调制掺杂的n型HgTe单量子阱SQW的有效g因子已通过重合方法在倾斜磁场中确定为介于15和35之间。对于对称掺杂的样品,发现有效g因子为不同填充因子的常数;但是,对于不对称的SQW,随着填充因子的增加,已经观察到很大的增加。这可以归结为Zeeman自旋分裂和Rashba自旋轨道分裂的结合。在基于8×8 k·p方法的理论计算与实验结果之间已取得合理的共识。

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