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Bound polaron in a two- and three-dimensional quantum dot for arbitrary electron-phonon coupling strength

机译:二维和三维量子点中的束缚极化子,可实现任意的电子-声子耦合强度

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A variational approach is presented for calculating the ground-state (GS) binding energies of an electron bound to a Coulomb impurity in a polar semiconductor quantum dot (QD) with parabolic confinement in both two and three dimensions. We perform calculations for the entire range of the electron-phonon coupling constant and the Coulomb binding parameter and for arbitrary confinement length. It is found that the polaronic effect is stronger in a two dimensions (2D) dot than in a three dimensions (3D) dot and this trend is more pronounced with the increase of the coupling constant. Furthermore, the GS binding energy increases with increasing the Coulomb binding parameter in both 2D and 3D QDs for the same electron-phonon coupling constant. The results also indicate that this effect becomes much more pronounced with decreasing dimensionality.
机译:提出了一种变分方法,用于计算在二维和三维方向上均具有抛物线约束的极性半导体量子点(QD)中与库仑杂质结合的电子的基态(GS)结合能。我们对电子-声子耦合常数和库仑结合参数的整个范围以及任意约束长度进行计算。发现二维(2D)点的极化作用比三维(3D)点的极化作用更强,并且随着耦合常数的增加,这种趋势更加明显。此外,对于相同的电子-声子耦合常数,在2D和3D QD中GS的结合能都随着库仑结合参数的增加而增加。结果还表明,随着尺寸的减小,这种效果变得更加明显。

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