T-gate Geometric (solution For Submicrometer Gate Length) Hemt: Physical Analysis, Modeling And Implementation As Parasitic Elements And Its Usage As Dual Gate For Variable Gain Amplifiers

摘要

applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results obtained using the proposed analytical scheme has been compared with simulated and experimental results, to prove the validity of our model.