机译:具有凹入式栅极和沟道的新型4H-SiC MESFET
Department of Electrical Engineering, University of Birjand, Birjand, Iran;
Department of Electrical Engineering, University of Birjand, Birjand, Iran;
Faculty of Engineering, Ferdowsi University of Mashhad, Mashhad, Iran;
Index terms-recessed gate and channel; 4H-SiC MESFET; DC trans-conductance; Short channel effect; Breakdown voltage; Output resistance;
机译:具有部分重掺杂沟道的改进的双凹P缓冲4H-SiC MESFET
机译:具有Γ栅极和凹入p缓冲层的4H-SiC MESFET的性能得到改善
机译:具有凹形漏极漂移区的非对称3D三栅极4H-SiC MESFET
机译:改进了具有凹陷漏极漂移区和凹陷的P缓冲层的栅极栅极4H-SiC MESFET
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:具有部分低掺杂沟道的改进型4H-SiC MESFET
机译:4H-SIC凹槽型磁架DC特性研究