机译:带有阶梯式电子注入器的InGaN / GaN蓝色LED中的InGaN应力补偿层
Advanced Research Laboratories, Department of Physics, Bilkent University;
Advanced Research Laboratories, Department of Physics, Bilkent University;
Advanced Research Laboratories, Department of Physics, Bilkent University;
Advanced Research Laboratories, Department of Physics, Bilkent University,Institute of Applied Mathematics, Middle East Technical University;
Advanced Research Laboratories, Department of Physics, Bilkent University,Institute of Physics, NAS of Ukraine;
Advanced Research Laboratories, Department of Physics, Bilkent University,Department of Electrical and Electronics Engineering, Uludağ University;
Department of Nanotechnology Engineering, Cumhuriyet University;
Department of Electrical and Computer Engineering, School of Engineering, Virginia Commonwealth University;
Department of Electrical and Computer Engineering, School of Engineering, Virginia Commonwealth University;
Department of Electrical and Computer Engineering, School of Engineering, Virginia Commonwealth University;
Department of Electrical and Computer Engineering, School of Engineering, Virginia Commonwealth University;
Light-emitting diode; Step-graded electron injector; Stress compensation layer; InGaN/GaN;
机译:具有阶梯式电子注入器的增强型InGaN / GaN发光二极管的两步钝化
机译:在GaN势垒和InGaN阱之间具有超薄插入层的InGaN / GaN基蓝色LED的增强性能
机译:p-GaN中两步掺Mg对不具有AlGaN电子阻挡层的InGaN蓝色发光二极管的效率特性的影响
机译:浅第一阱和阶梯式电子阻挡层增强了GaN / InGaN多量子阱LED的性能
机译:利用纳米技术在Si上生长,制造和表征基于InGaN / GaN的蓝色,绿色和黄色LED。
机译:GaOOH NRA使用薄的ATO种子层改善了InGaN / GaN蓝色LED的光提取
机译:具有和不具有n-InGaN电子存储层的蓝色InGaN / GaN量子阱二极管的电致发光效率