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首页> 外文期刊>Superlattices and microstructures >Propagation study of Rayleigh surface acoustic wave in a one-dimensional piezoelectric phononic crystal covered with two homogeneous layers
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Propagation study of Rayleigh surface acoustic wave in a one-dimensional piezoelectric phononic crystal covered with two homogeneous layers

机译:瑞利表面声波在覆盖有两个均质层的一维压电声子晶体中的传播研究

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AbstractIn this paper, plane wave expansion and stiffness matrix methods are adopted to analyze the dispersion relation of Rayleigh surface acoustic waves in a piezoelectric phononic composite composed of two homogeneous layers (ZnO and AlN) deposited on a one-dimensional piezoelectric (111) Si/AlN phononic substrate. The effect of crystallographic orientation of silicon on the dispersion relation is discussed. We found that the width of the gap became larger when the middle layer was introduced. The influence of filling fraction, thicknesses of the film and the middle layer on the band gap width is discussed. In addition, the phase velocity and the electromechanical coupling coefficient for Rayleigh surface modes are calculated versus the filling fraction. A comparison of phononic composite with ZnO/AlN/(111)Si layered structure is presented to deduce the interest of introduction of the phononic substrate.HighlightsAnalyze of dispersion relation of Rayleigh surface acoustic waves in a piezoelectric phononic composite.Effect of crystallographic orientation of silicon on the dispersion relation is discussed.Influences of filling fraction, thickness of the film and the middle layer in the band gap width are determinated.Phase velocity and electromechanical coupling coefficient for Rayleigh surface modes are calculated versus filling fraction.Comparison of phononic composite with layered structure.
机译: 摘要 本文采用平面波扩展和刚度矩阵方法来分析压电声子复合材料中瑞利表面声波的色散关系由沉积在一维压电(111)Si / AlN声子基板上的两个均质层(ZnO和AlN)组成。讨论了硅的晶体取向对分散关系的影响。我们发现,当引入中间层时,间隙的宽度变大。讨论了填充率,薄膜厚度和中间层厚度对带隙宽度的影响。此外,计算了瑞利表面模式的相速度和机电耦合系数与填充率的关系。通过对ZnO / AlN /(111)Si层状结构声子复合材料的比较,得出引入声子基体的兴趣。 突出显示 压电声子复合材料中瑞利表面声波的色散关系分析。 硅的晶体取向对硅的影响分散关系。 确定填充率,薄膜厚度和中间层对带隙宽度的影响。 计算瑞利表面模式相对于填充的相速度和机电耦合系数 具有分层结构的声子复合材料的比较。 < / ce:抽象>

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