Processing for advanced devices with hot-wall furnace RTP

摘要

A new single wafer hot-wall isothermal furnace RTP system incorporates many benefits of large batch furnaces while satisfying throughput and thermal budget constraints motivating an industry migration towards single wafer processing. The system is capable of producing wet and dry oxides, with and without chlorine. A quartz process chamber makes it compatible with chlorine processes. Oxidation or anneal processes in NO or N_2O can be performed to produce nitrided gate oxides, and numerous CVD applications are possible. The hot-wall isothermal process chamber reduces emissivity problems, and a stacked process chamber configuration contributes to efficient fab utilization and sequential processing capability for gate stack and capacitor structures.