Devices dictate control of implant-beam incident angle

摘要

As device scaling continues, precise control of dopant placement becomes a critical requisite in the fabrication of high-performance devices. Here we compare the performance of single-wafer parallel-beam implanters to traditional batch implanters, with spinning disks, looking at beam incident angle control. There are several sources of beam incident angle variation in batch implanters, depending upon the scanning system and beam delivery mechanism. The consequences of these sources of angular variations are crucial in high-performance device fabrication.