Simultaneous optimization of electroplating and CMP for copper processes

摘要

Electroplating copper from various sources using different additives results in different surface film chemistries. During subsequent polishing, the post-CMP results such as removal rate, dishing, erosion, and surface defects can vary widely, even if identical sets of CMP consumables and parameters are used. Simultaneous optimization of plating and pla-narization processes can enable the best post-CMP results, and thus yield.