Jet ECD plating and seed layers for sub-0.10 μm Cu interconnects

摘要

Jet electrochemical deposition plating [1-2] has shown excel- lent capability for void-free Cu filling of narrow openings with very large aspect ratios. JECD facilitates high-speed plating, with fully bright deposits at higher speeds. Additional "leveler" additives and pulse plating are not necessary for the elimination of spikes, bumps, or humps. JECD also provides wide process latitude. Here we suggest an enhanced inhibition model explaining the mechanism and the beneficial effects of JECD. We also report an innovative multiple-Cu seed layer combining at least one PVD and one CVD Cu layer.